Spectrum Analysis Hafnium Dioxide / Hafnium Oxide Hfo2 Cas No 12055-23-1

 

       Hafnium (HfO2) is a broadband gap and high dielectric constant of ceramics, recently in the field of industry especially microelectronics is extremely attention, because it is most likely to replace the current silicon-based integrated circuit of the core components of metal oxide semiconductor field effect tube (MOSFET) gate dielectric silica (SiO2), in order to solve the MOSFET in the development of the traditional structure of SiO2 / Si size limit.

 

1, molecular formula: HfO2

2. Molecular weight: 210.6

3. Appearance: white or gray slices, particles

4. Density: 9.68g/cm3

5, melting point: 2850 degrees centigrade

6. Vaporization pressure

At 2678 C, 1Pa

At 2875 C, 10Pa

7. The coefficient of linear expansion: 5.6 x 10-6/K

8. Solubility: insoluble in water

8, purity: 99.99

9. Film characteristics:

Light transmittance range from 220 to 12000Nm

Refractive index (250nm) ~ 2.15

(500nm) ~ 2

10. The condition of evaporation:

Electronic gun

Oxygen partial pressure to 1~2 x 10-2Pa

Evaporation temperature to 2600~2800 degrees centigrade

Substrate temperature to 250 degrees centigrade

Evaporation rate 2nm/s

Application field: UV antireflection film, interference membrane

 

 

ITEM			SPECIFICATIONS			TEST RESULTS
HfO2+Zr(%,Min)			99.9% min			conform
RE Impurities(%,Max)
Fe			0.0002			conform
Al			0.0001			conform
Si			0.002			conform
Ti			0.01			conform
B			0.0025			conform
Pb			0.001			conform
Cd			0.0001			conform
Cu			0.002			conform
Cr			0.005			conform
Mg			0.001			conform
Mo			0.001			conform
Mn			0.001			conform
Ni			0.0015			conform
Sn			0.002			conform
V			0.001			conform
L.O.I(1100℃)			1			conform
Other Index
Particle size (mm)			0.1-3			conform